首页 | 本学科首页   官方微博 | 高级检索  
检索        

杭白菊同源四倍体的诱导和鉴定
引用本文:赵慧娜,高山林,陈兰兰.杭白菊同源四倍体的诱导和鉴定[J].药物生物技术,2007,14(2):99-103.
作者姓名:赵慧娜  高山林  陈兰兰
作者单位:中国药科大学,江苏,南京,210038
摘    要:采用正交试验设计方法,进行了杭白菊试管苗快速繁殖技术的优化,同时进行了组织培养条件下杭白菊同源四倍体诱导与鉴定技术的研究。结果表明,诱导愈伤组织的最优外植体为叶片,最适培养基为MS+KT(激动素)2.0mg/L+NAA(萘乙酸)0.2mg/L;确定了杭白菊最佳繁殖培养基为MS+BA(6-苄基嘌呤)0.2mg/L+IAA(吲哚乙酸)0.05mg/L+NAA0.2mg/L;最佳生根培养基为1/2MS+IAA0.2n堰/L+ABT(生根粉)0.3mg/L。在诱导四倍体的试验中,秋水仙碱浓度对存活率有显著影响,诱导杭白菊同源四倍体的最佳条件是在2%二甲基亚砜和浓度为0.2%的秋水仙碱中浸泡36h,诱导率高达13.33%。通过根尖细胞染色体鉴定,共获得11个同源四倍体株系。

关 键 词:杭白菊  组织培养  同源四倍体  染色体鉴定
文章编号:1005-8915(2007)02-0099-05
修稿时间:2006-09-042006-11-30

The Inducement and Identification of the Polyploid of Chrysanthemum Morifolium Ramat.
ZHAO Hui-na,GAO Shan-lin,CHEN Lan-lan.The Inducement and Identification of the Polyploid of Chrysanthemum Morifolium Ramat.[J].Pharmaceutical Biotechnology,2007,14(2):99-103.
Authors:ZHAO Hui-na  GAO Shan-lin  CHEN Lan-lan
Institution:China Pharmaceutical University, Nanjing 210038, China
Abstract:The rapid-propagation system of Chrysanthemum morifolium has been established.The results showed that the leaves are the best explant to induce callus and the MS KT2.0mg/L NAA0.2mg/L is the best medium.The results indicated that the strong and green clump-buds could be induced on the MS media containing BA0.2mg/L,IAA0.05mg/L and NAA0.2mg/L.The strong root was induced on the 1/2MS,IAA0.2mg/L and ABT0.3mg/L;The technology of inducing autotetraploid of Chrysanthemum morifolium was studied in vitro.The results indicated that autotetraploid can be induced by immersing the buds in 0.2% colchicines solution supplemented with 2% DMSO.This method is proved to be the best way to induce autotetraploid with inducing ratio as high as 13.33%.11 lines of autotetraploid lines were identified by optimized chromosome determinmation method.It has laid the basis for further selecting the varieties of Chrysanthemum morifolium with good quality and high yield.
Keywords:Chrysanthemum morifolium  Tissue culture  Autotetraploids  Chromosome determinmation
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号