The Role of the Graphene Oxide (GO) and Reduced Graphene Oxide (RGO) Intermediate Layer in CZTSSe Thin-Film Solar Cells |
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| Authors: | Woo-Lim Jeong Sang-Hyuk Park Young-Dahl Jho Soo-Kyung Joo Dong-Seon Lee |
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| Affiliation: | School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Gwangju 61005, Korea; (W.-L.J.); (S.-H.P.); (Y.-D.J.) |
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| Abstract: | ![]()
Cu2ZnSn(S,Se)4 (CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film and the Mo back contact is used to suppress the formation of MoSe2 and decomposition of CZTSSe. Among the candidates for the intermediate layer, graphene oxide (GO) and reduced GO have excellent properties, including high-charge mobility and low processing cost. Depending on the type of GO, the solar cell parameters, such as fill factor (FF), were enhanced. Thus, the conversion efficiency of 6.3% was achieved using the chemically reduced GO intermediate layer with significantly improved FF. |
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| Keywords: | Cu2ZnSn(S,Se)4 thin-film solar cells graphene oxide intermediate layer back contact |
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