首页 | 本学科首页   官方微博 | 高级检索  
     

氯化镧对人牙釉质人工龋的影响──扫描电镜、电子探针分析
引用本文:王小平,刘蜀凡,沈子华. 氯化镧对人牙釉质人工龋的影响──扫描电镜、电子探针分析[J]. 牙体牙髓牙周病学杂志, 1995, 0(1)
作者姓名:王小平  刘蜀凡  沈子华
作者单位:长沙市湖南医科大学附属湘雅医院,上海铁道医学院
摘    要:
借助体外人工龋方法从形态和内部结构变化上探讨了氯化镧(La3+)对人牙釉质龋的影响。磨片光镜下显示La3+预处理阻抑龋病发展的作用不如氟化钠(F-),但La3+与F-先后预处理能明显减轻龋损程度。扫描电镜观察发现La3+及F-预处理均能在牙面形成覆盖物,但以La3+与F-先后预处理产生的覆盖物较致密且与牙面结合较紧密。电子探针分析显示La3+处理后釉质表层内钙(Ca2+)含量明显减少,而La3+显著增加,表明La3+能与Ca2+发生离子交换反应而进入釉质。这种牙面覆盖物的形成及La3+-Ca2+交换反应可能是La3+预处理能防龋的关键之一。

关 键 词:氯化镧,人工龋,釉质,电子探针分析,扫描电镜

The influeuce of Lanthanum Chloride on the progression of the artificial caries in human euamel.
Wang Xiaoping, Liu Shufan, Shen Zihua. The influeuce of Lanthanum Chloride on the progression of the artificial caries in human euamel.[J]. Chinese Journal of Conservative Dentistry, 1995, 0(1)
Authors:Wang Xiaoping   Liu Shufan   Shen Zihua
Abstract:
The ability of Lanthanum Chloridc (La) to inhibit the progression of artificial caries in human enamel was studied using light microscopy, SEM and microprobe analysis techniques. The microscopy view of the sections showed the effect of the La(3 ) on artificial caries was not so good as that of sodium fluoride (F) but La(3 ) F(-)pretreatment inhibited the progression of the artificial caries to a certain extent. Different pretreatments all produced surface coatings on the enamel but the surface coatings which were in more intimate contact with the enamel surface of artificial caries were seen after F(-)and La(3 ) F(-) pretreatment.The microprobe analysis revealed the La(3 )could penetrate into the enamel and the La(3 ) of the surface layer of artificial caries was increased but the Ca(2 ) was decreased obviously after the pretreatment of the La. The results suggested that the Ca(2 ) in the surface layer of enamel could be replaced by the La(3 ). It was believed that the surface coatings and the ion exchanges might be the key that the La(3 )could prevent dental caries.
Keywords:Lanthanum chloride   Artificial caries   Enamel   Microprobe analysis technique.  
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号