Fluorine-Terminated Polycrystalline Diamond Solution-Gate Field-Effect Transistor Sensor with Smaller Amount of Unexpectedly Generated Fluorocarbon Film Fabricated by Fluorine Gas Treatment |
| |
Authors: | Yukihiro Shintani Hiroshi Kawarada |
| |
Affiliation: | 1.Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;2.Department of Management Information Sciences, Faculty of Social Systems Science, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan;3.The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan |
| |
Abstract: | In this study, a partially fluorine-terminated solution-gate field-effect transistor sensor with a smaller amount of unexpectedly generated fluorohydrocarbon film on a polycrystalline diamond channel is described. A conventional method utilizing inductively coupled plasma with fluorocarbon gas leads the hydrogen-terminated diamond to transfer to a partially fluorine-terminated diamond (C–F diamond); an unexpected fluorohydrocarbon film is formed on the surface of the diamond. To overcome this issue, we newly applied fluorine gas for the fluoridation of the diamond. Analytical results of X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry suggest that the fluorocarbon film does not exist or only a smaller amount of fluorocarbon film exists on the diamond surface. Conversely, the C–F diamond fabricated by the conventional method of inductively coupled plasma with a perfluoropropane gas (C3F8 gas) source possesses a certain amount of fluorocarbon film on its surface. The C–F diamond with a smaller amount of unexpectedly generated fluorohydrocarbon film possesses nearly ideal drain–source–voltage vs. gate–source–current characteristics, corresponding to metal–oxide–silicon semiconductor field-effect transistor theory. The results indicate that the fluorine gas (F2 gas) treatment proposed in this study effectively fabricates a C–F diamond sensor without unexpected semiconductor damage. |
| |
Keywords: | polycrystalline diamond fluorine gas treatment boron-doped diamond fluorine-termination electrolyte-solution-gate field-effect transistor |
|
|