首页 | 本学科首页   官方微博 | 高级检索  
     


Diabetes impairs learning performance through affecting membrane excitability of hippocampal pyramidal neurons
Authors:Heng Li-Jun  Yang Rui-Hua  Jia Dong
Affiliation:a Department of Neurosurgery, Tangdu Hospital, the Fourth Military Medical University, The Fourth Military Medical University, Xi’an 710038, PR China
b Department of Nutrition and Food Hygiene, The Fourth Military Medical University, Xi’an 710032, PR China
Abstract:Previous research has demonstrated that diabetes induced learning and memory deficits. However, the mechanism of memory impairment induced by diabetes is poorly understood. Sprague-Dawley rats were used in the present study to investigate the effect of streptozotocin (STZ)-induced diabetes on spatial learning and memory with the Morris water maze. The excitability of CA1 pyramidal neurons in hippocampus was also examined. Diabetes impaired spatial learning and memory of rats. Diabetes decreased the membrane excitability of CA1 pyramidal neurons, effects which may contribute to the behavioral deficits. To investigate the further ionic mechanisms, the sodium currents and the potassium currents were detected. Diabetes decreased both transient and persistent sodium currents, and increased both transient and sustained potassium currents, which leads to the reduction of neuron excitability and to the increase of firing accommodation. The results of the present study suggested that sodium and potassium currents contributed to the inhibitory effect of diabetes on neuron excitability, further influencing learning and memory processing. Modulating the ion channels and increasing the membrane excitability are possible candidates for preventing the impairments of diabetes on hippocampal function.
Keywords:STZ, streptozotocin   ACSF, artificial cerebrospinal fluid   AP, action potential   ADP, after-depolarization potential   INaT, transient Na current   TTX-S, TTX-sensitive   TTX-R, TTX-resistant   INaP, persistent sodium current
本文献已被 ScienceDirect PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号