Modification of NiOx hole transport layer for acceleration of charge extraction in inverted perovskite solar cells

The modification of the inorganic hole transport layer has been an efficient method for optimizing the performance of inverted perovskite solar cells. In this work, we propose a facile modification of a compact NiO_x film with NiO_x nanoparticles and explore the effects on the charge carrier dynamic behaviors and photovoltaic performance of inverted perovskite devices. The modification of the NiO_x hole transport layer can not only enlarge the surface area and infiltration ability, but also adjust the valence band maximum to well match that of perovskite. The photoluminescence results confirm the acceleration of the charge separation and transport at the NiO_x/perovskite interface. The corresponding device possesses better photovoltaic parameters than the device based on control NiO_x films. Moreover, the charge carrier transport/recombination dynamics are further systematically investigated by the measurements of time-resolved photoluminescence, transient photovoltage and transient photocurrent. Consequently, the results demonstrate that proper modification of NiO_x can significantly enlarge interface area and improve the hole extraction capacity, thus efficiently promoting charge separation and inhibiting charge recombination, which leads to the enhancement of the device performances.

The NiO_x layer modified with NiO_x nanoparticles obtains surface property optimization and energy level modulation, thus improving charge transport and device performance.