Effect of Sr Doping on Structural and Transport Properties of Bi2Te3 |
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Authors: | Yurii G. Selivanov Victor P. Martovitskii Mikhail I. Bannikov Aleksandr Y. Kuntsevich |
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Affiliation: | P.N. Lebedev Physical Institute of the RAS, 119991 Moscow, Russia; (V.P.M.); (M.I.B.) |
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Abstract: | Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped BiTe single crystals. We found that Bridgman grown samples have p-type conductivity in the low 10 cm, high mobility of 4000 cmVs, crystal structure independent on nominal dopant content, and no signs of superconductivity. We also studied molecular beam epitaxy grown SrBiTe films on lattice matched (1 1 1) BaF polar surface. Contrary to the bulk crystals thin films have n-type conductivity. Carrier concentration, mobility and c-lattice constant demonstrate pronounced dependence on Sr concentration x. Variation of the parameters did not lead to superconductivity. We revealed, that transport and structural parameters are governed by Sr dopants incorporation in randomly inserted Bi bilayers into the parent matrix. Thus, our data shed light on the structural position of dopant in BiTe and should be helpful for further design of topological insulator-based superconductors. |
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Keywords: | topological insulator topological superconductivity doping thin films molecular beam epitaxy single crystals |
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