Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ

La_1−xSr_xTiO_3+δ (LST) has been studied in many fields, especially in the field of microelectronics due to its excellent electrical performance. Our previous theoretical simulated work has suggested that LST has good dielectric properties, but there are rare reports about this, especially experimental reports. In this paper, LST was prepared using a solid-state reaction method. The X-rays diffraction (XRD), scanning electron microscope (SEM), broadband dielectric spectroscopy, impedance spectroscopy and photoconductive measurement were used to characterize the sample. The results show that the values of dielectric parameters (the relative dielectric constant ε_r and dielectric loss tanδ), dependent on temperature, are stable under 350 °C and the value of the relative dielectric constant and dielectric loss are about 52–88 and 6.5 × 10⁻³, respectively. Its value of conductivity increases with rise in temperature, which suggests its negative temperature coefficient of the resistance. In addition, the band gap of LST is about 3.39 eV, so it belongs to a kind of wide-band-gap semiconductor materials. All these indicate that LST has anti-interference ability and good dielectric properties. It could have potential applications as an electronic material.     

Facile Synthesis of Uniform Mesoporous Nb2O5 Micro-Flowers for Enhancing Photodegradation of Methyl Orange

The removal of organic pollutants using green environmental photocatalytic degradation techniques urgently need high-performance catalysts. In this work, a facile one-step hydrothermal technique has been successfully applied to synthesize a Nb₂O₅ photocatalyst with uniform micro-flower structure for the degradation of methyl orange (MO) under UV irradiation. These nanocatalysts are characterized by transmission and scanning electron microscopies (TEM and SEM), X-ray diffraction (XRD), Brunauer–Emmett–Teller (BET) method, and UV-Vis diffuse reflectance spectroscopy (DRS). It is found that the prepared Nb₂O₅ micro-flowers presents a good crystal phases and consist of 3D hierarchical nanosheets with 400–500 nm in diameter. The surface area is as large as 48.6 m² g⁻¹. Importantly, the Nb₂O₅ micro-flowers exhibit superior catalytic activity up to 99.9% for the photodegradation of MO within 20 mins, which is about 60-fold and 4-fold larger than that of without catalysts (W/O) and commercial TiO₂ (P25) sample, respectively. This excellent performance may be attributed to 3D porous structure with abundant catalytic active sites.     

Synthesis of Selected Mixed Oxide Materials with Tailored Photocatalytic Activity in the Degradation of Tetracycline

The elimination of antibiotics occurring in the natural environment has become a great challenge in recent years. Among other techniques, the photocatalytic degradation of this type of pollutant seems to be a promising approach. Thus, the search for new photoactive materials is currently of great importance. The present study concerns the sol–gel synthesis of mono, binary and ternary TiO₂-based materials, which are used as active photocatalysts. The main goal was to evaluate how the addition of selected components—zirconium dioxide (ZrO₂) and/or zinc oxide (ZnO)—during the synthesis of TiO₂-based materials and the temperature of thermal treatment affect the materials’ physicochemical and photocatalytic properties. The fabricated mixed oxide materials underwent detailed physicochemical analysis, utilizing scanning-electron microscopy (SEM), X-ray diffraction (XRD), diffuse reflectance spectroscopy (DRS), energy-dispersive X-ray spectroscopy (EDS), low-temperature N₂ sorption (BET model), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The synthesized mixed oxide materials were used as photocatalysts in the heterogeneous photodegradation of tetracycline (TC). The physicochemical properties of the fabricated photocatalysts, including morphology, crystalline and textural structure, as well as the pH of the reaction system in the photocatalytic tests, were taken into account in determining their photo-oxidation activity. LC–MS/MS analysis was used to identify the possible degradation products of the selected antibiotic.     

The Effect of Reactive Electric Field-Assisted Sintering of MoS2/Bi2Te3 Heterostructure on the Phase Integrity of Bi2Te3 Matrix and the Thermoelectric Properties

In this work, a series of Bi₂Te₃/X mol% MoS₂ (X = 0, 25, 50, 75) bulk nanocomposites were prepared by hydrothermal reaction followed by reactive spark plasma sintering (SPS). X-ray diffraction analysis (XRD) indicates that the native nanopowders, comprising of Bi₂Te₃/MoS₂ heterostructure, are highly reactive during the electric field-assisted sintering by SPS. The nano-sized MoS₂ particles react with the Bi₂Te₃ plates matrix forming a mixed-anion compound, Bi₂Te₂S, at the interface between the nanoplates. The transport properties characterizations revealed a significant influence of the nanocomposite structure formation on the native electrical conductivity, Seebeck coefficient, and thermal conductivity of the initial Bi₂Te₃ matrix. As a result, enhanced ZT values have been obtained in Bi₂Te₃/25 mol% MoS₂ over the temperature range of 300–475 K induced mainly by a significant increase in the electrical conductivity.     

The Dielectric Constant of Ba6−3x(Sm1−yNdy)8+2xTi18O54 (x = 2/3) Ceramics for Microwave Communication by Linear Regression Analysis

The electronics related to the fifth generation mobile communication technology (5G) are projected to possess significant market potential. High dielectric constant microwave ceramics used as filters and resonators in 5G have thus attracted great attention. The Ba_6−3x(Sm_1−yNd_y)_8+2xTi₁₈O₅₄ (x = 2/3) ceramic system has aroused people’s interest due to its underlying excellent microwave dielectric properties. In this paper, the relationships between the dielectric constant, Nd-doped content, sintering temperature and the density of Ba_6−3x(Sm_1−yNd_y)_8+2xTi₁₈O₅₄ (x = 2/3) ceramics were studied. The linear regression equation was established by statistical product and service solution (SPSS) data analysis software, and the factors affecting the dielectric constant have been analyzed by using the enter and stepwise methods, respectively. It is found that the model established by the stepwise method is practically significant with Y = −71.168 + 6.946x₁ + 25.799x₃, where Y, x₁ and x₃ represent the dielectric constant, Nd content and the density, respectively. According to this model, the influence of density on the dielectric constant is greater than that of Nd doping concentration. We bring the linear regression analysis method into the research field of microwave dielectric ceramics, hoping to provide an instructive for the optimization of ceramic technology.     

Balancing Strength and Ductility in Al Matrix Composites Reinforced by Few-Layered MoS2 through In-Situ Formation of Interfacial Al12Mo

In this work, few-layered MoS₂ (FLM) nanosheet-reinforced Al matrix composites are developed through powder metallurgy and hot extrusion. The microstructure, mechanical properties, and strengthening mechanisms have been systematically investigated. It is found that Al₁₂Mo and Al₂S₃ can be formed in-situ during the sintering process, resulting in the improvement of interfacial bonding between FLM and Al matrix. With 1.5 wt.% of FLM addition, an improved tensile strength of 234 MPa with a high elongation of 17% can be obtained. Moreover, the strengthening mechanisms are also demonstrated to be grain refinement, dislocation strengthening, and load transfer, and the calculation indicates that load transfer is the main contribution factor. This work will inspire more new designs of metal matrix composites with balanced strength and ductility.     

MoS2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review

A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device’s photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS₂) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS₂ and graphene/h-BN/MoS₂ heterostructures with plasmonic effect is presented with potential leads to new research opportunities.     

Mg2+ Doping Effects on the Structural and Dielectric Properties of CaCu3Ti4O12 Ceramics Obtained by Mechanochemical Synthesis

In this study, ceramic CaCu₃Ti₄O₁₂ (CCTO) and CaCu_3−xMg_xTi₄O₁₂ solid solutions in which 0.1 ≤ x ≤ 0.5 were prepared by the mechanochemical method, realized by a high-energy ball milling technique. The effects of the Mg²⁺ ion concentration and sintering time on the dielectric response in the prepared ceramics were investigated and discussed. It was demonstrated that, by the use of a sufficiently high energy of mechanochemical treatment, it is possible to produce a crystalline product after only 2 h of milling the mixture of the oxide substrates. Both the addition of magnesium ions and the longer sintering time of the mechanochemically-produced ceramics cause excessive grain growth and significantly affect the dielectric properties of the materials. The X-ray diffraction (XRD) analysis showed that all of the as-prepared solid solutions, CaCu_3−xMg_xTi₄O₁₂ (0.0 ≤ x ≤ 0.5), regardless of the sintering time, exhibit a cubic perovskite single phase. The dielectric study showed two major contributions associated with the grains and the grain boundaries. The analysis of the electric modules of these ceramics confirmed the occurrence of Maxwell–Wagner type relaxation, which is dependent on the temperature.     

Nanocomposites Prepared from Carbon Nanotubes and the Transition Metal Dichalcogenides WS2 and MoS2 via Surfactant-Assisted Dispersions as Electrocatalysts for Oxygen Reactions

Fuel cells are emerging devices as clean and renewable energy sources, provided their efficiency is increased. In this work, we prepared nanocomposites based on multiwalled carbon nanotubes (MWNTs) and transition metal dichalcogenides (TMDs), namely WS₂ and MoS₂, and evaluated their performance as electrocatalysts for the oxygen evolution reaction (OER) and the oxygen reduction reaction (ORR), relevant to fuel cells. The one- and two-dimensional (1D and 2D) building blocks were initially exfoliated and non-covalently functionalized by surfactants of opposite charge in aqueous media (tetradecyltrimethylammonium bromide, TTAB, for the nanotubes and sodium cholate, SC, for the dichalcogenides), and thereafter, the three-dimensional (3D) MoS₂@MWNT and WS₂@MWNT composites were assembled via surfactant-mediated electrostatic interactions. The nanocomposites were characterized by scanning electron microscopy (SEM) and structural differences were found. WS₂@MWNT and MoS₂@MWNT show moderate ORR performance with potential onsets of 0.71 and 0.73 V vs. RHE respectively, and diffusion-limiting current densities of −1.87 and −2.74 mA·cm⁻², respectively. Both materials present, however, better tolerance to methanol crossover when compared to Pt/C and good stability. Regarding OER performance, MoS₂@MWNT exhibits promising results, with η₁₀ and j_max of 0.55 V and 17.96 mA·cm⁻², respectively. The fabrication method presented here is cost-effective, robust and versatile, opening the doors for the optimization of electrocatalysts’ performance.     

Statistical Analysis of Uniform Switching Characteristics of Ta2O5-Based Memristors by Embedding In-Situ Grown 2D-MoS2 Buffer Layers

A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-dimensional (2D) materials are being widely studied for implementation in the development of new information-processing electronic devices. However, inherent drawbacks concerning operational uniformities, such as device-to-device variability, device yield, and reliability, are huge challenges in the realization of concrete memristor hardware devices. In this study, we fabricated Ta₂O₅-based memristor devices, where a 2D-MoS₂ buffer layer was directly inserted between the Ta₂O₅ switching layer and the Ag metal electrode to improve uniform switching characteristics in terms of switching voltage, the distribution of resistance states, endurance, and retention. A 2D-MoS₂ layered buffer film with a 5 nm thickness was directly grown on the Ta₂O₅ switching layer by the atomic-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) method, which is highly uniform and provided a superior yield of 2D-MoS₂ film. It was observed that the switching operation was dramatically stabilized via the introduction of the 2D-MoS₂ buffer layer compared to a pristine device without the buffer layer. It was assumed that the difference in mobility and reduction rates between Ta₂O₅ and MoS₂ caused the narrow localization of ion migration, inducing the formation of more stable conduction filament. In addition, an excellent yield of 98% was confirmed while showing cell-to-cell operation uniformity, and the extrinsic and intrinsic variabilities in operating the device were highly uniform. Thus, the introduction of a MoS₂ buffer layer could improve highly reliable memristor device switching operation.     

Direct Ink Writing of Three-Dimensional (K,Na)NbO3-Based Piezoelectric Ceramics

A kind of piezoelectric ink was prepared with Li, Ta, Sb co-doped (K, Na)NbO₃ (KNN) powders. Piezoelectric scaffolds with diameters at micrometer scale were constructed from this ink by using direct ink writing method. According to the micro-morphology and density test, the samples sintered at 1100 °C for 2 h have formed ceramics completely with a high relative density of 98%. X-ray diffraction (XRD) test shows that the main phase of sintered samples is orthogonal (Na_0.52K_0.4425Li_0.0375)(Nb_0.87Sb_0.07Ta_0.06)O₃. The piezoelectric constant d₃₃ of 280 pC/N, dielectric constant ε of 1775, remanent polarization P_r of 18.8 μC/cm² and coercive field E_c of 8.5 kV/cm prove that the sintered samples exhibit good electrical properties. The direct ink writing method allows one to design and rapidly fabricate piezoelectric structures in complex three-dimensional (3D) shapes without the need for any dies or lithographic masks, which will simplify the process of material preparation and offer new ideas for the design and application of piezoelectric devices.     

Performance of MoS2/Zr Composite Coatings at Different Deposition Temperatures

The properties of the MoS₂/Zr coatings can be significantly affected by the deposition temperature. In this study, the MoS₂/Zr composite coatings were fabricated on the cemented carbide surface, utilizing the duplex deposition technology at various deposition temperatures. The effects of deposition temperature on the mechanical and friction properties of the MoS₂/Zr coatings were systematically studied. Results exhibited that as the deposition temperature increased, the adhesion force increased first and then decreased, and the coating thickness and micro-hardness gradually increased. Dry sliding tests against a hardened steel ring showed that the tribological behaviors and wear mechanisms of the MoS₂/Zr coatings varied with deposition temperature, which were due to the changing mechanical properties of coatings caused by the temperature. The coatings deposited at a temperature of 180 °C and 200 °C possessed preferable comprehensive mechanical and tribological properties.     

First-Principles Study of a MoS2-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS₂ monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS₂ monolayer. Furthermore, we estimate the hole mobility to be relatively high (~10⁶ cm²V⁻¹s⁻¹), which can be useful for ultra-fast devices at the nanoscale.     

The Effect of Ca Dopant on the Electrical and Dielectric Properties of BaTi4O9 Sintered Ceramics

The current research examines the impact of Ca²⁺ substitution on the phase and electrical properties of (Ba_1−xCa_x)Ti₄O₉, (x = 0.0, 0.3, 0.6, and 0.9) sintered pellets synthesized by solid-state reaction method. The as-synthesized samples were analyzed using X-ray diffraction (XRD) and impedance spectroscopy. The emergence of orthorhombic phase fit into space group Pnmm was revealed by XRD, and the addition of Ca resulted in a considerable shift in grain size. Dielectric properties were determined using an impedance spectroscopy in a wide frequency range from 1MHz to 3 GHz. The dielectric properties i.e., dielectric constant (ε_r) and dielectric loss (tanσ), were measured at 3 GHz frequency. The frequency-dependent parameters such as conductivity, dielectric constant, and dielectric loss indicated that the relaxation process is a Maxwell–Wagner type of interfacial polarization. The improved dielectric properties and low energy loss have made (Ba_1−xCa_x)Ti₄O₉ a prominent energy storage material. This study provides the possibility to improve its dielectric properties and reduce energy loss, making it an excellent energy storage material.     

A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS₂, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.     

Influence of Quenching and Subsequent Annealing on the Conductivity and Electromechanical Properties of Na1/2Bi1/2TiO3-BaTiO3

Na_1/2Bi_1/2TiO₃-based materials have gained considerable attention for their potential to exhibit giant strain, very-high ionic conductivity comparable to yttria stabilized zirconia or high mechanical quality factor for use in high power ultrasonics. In recent times, quenching Na_1/2Bi_1/2TiO₃-based compositions have been demonstrated to enhance the thermal depolarization temperature, thus increasing the operational temperature limit of these materials in application. This work investigates the role of quenching-induced changes in the defect chemistry on the dielectric, ferroelectric and piezoelectric properties of quenched Na_1/2Bi_1/2TiO₃-BaTiO₃. The quenched samples indeed demonstrate an increase in the bulk conductivity. Nevertheless, while subsequent annealing of the quenched samples in air/oxygen atmosphere reverts back the depolarization behaviour to that of a furnace cooled specimen, the bulk conductivity remains majorly unaltered. This implies a weak correlation between the defect chemistry and enhanced thermal stability of the piezoelectric properties and hints towards other mechanisms at play. The minor role of oxygen vacancies is further reinforced by the negligible (10–15%) changes in the mechanical quality factor and hysteresis loss.     

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

In this study, an investigation was performed on the properties of atomic-layer-deposited aluminum oxide (Al₂O₃) on an n-type silicon (n-Si) substrate based on the effect of post-deposition heat treatment, which was speckled according to ambient temperature and treatment applied time. Based on these dealings, a series of distinctions for extracted capacitance and dielectric constant, hysteresis was performed on annealed and nonannealed samples. The interface and border trap responses, including stress behavior after an application of constant voltage for a specific time and surface morphology by X-ray diffraction (XRD) technique, were also analyzed between the two above-mentioned sample types. Based on observation, the annealed samples showed superior performance in every aspect compared with the nonannealed ones. Some unusual behaviors after high annealing temperature were found, and the explanation is the ion diffusion from oxide layer towards the semiconductor. Since a constant voltage stress was not widely used on the metal–oxide–semiconductor capacitor (MOSCAP), this analysis was determined to reveal a new dimension of post-deposition annealing condition for the Al/Al₂O₃/n-Si gate stack.     

ZnO@Bi5O7I Heterojunction Derived from ZIF-8@BiOI for Enhanced Photocatalytic Activity under Visible Light

In the study, ZIF-8@BIOI composites were synthesized by the hydrothermal method and then calcined to acquire the ZnO@Bi₅O₇I composite as a novel composite for the photocatalytic deterioration of the antibiotic tetracycline (TC). The prepared ZnO@Bi₅O₇I composites were physically and chemically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Brunauer–Emmet–Teller (BET) surface area, UV–Vis diffuse reflectance spectroscopy (DRS), emission fluorescence spectra, transient photocurrent response, electrochemical impedance spectra and Mott–Schottky. Among the composites formed an n–n heterojunction, which increased the separation efficiency of electrons and holes and the efficiency of charge transfer. After the photocatalytic degradation test of TC, it showed that ZnO@Bi₅O₇I (2:1) had the best photodegradation effect with an 86.2% removal rate, which provides a new approach to the treatment of antibiotics such as TC in wastewater.     

Pulse Plasma Sintering of NiAl-Al2O3 Composite Powder Produced by Mechanical Alloying with Contribution of Nanometric Al2O3 Powder

NiAl-Al₂O₃ composites, fabricated from the prepared composite powders by mechanical alloying and then consolidated by pulse plasma sintering, were presented. The use of nanometric alumina powder for reinforcement of a synthetized intermetallic matrix was the innovative concept of this work. Moreover, this is the first reported attempt to use the Pulse Plasma Sintering (PPS) method to consolidate composite powder with the contribution of nanometric alumina powder. The composite powders consisting of the intermetallic phase NiAl and Al₂O₃ were prepared by mechanical alloying from powder mixtures containing Ni-50at.%Al with the contribution of 10 wt.% or 20 wt.% nanometric aluminum oxide. A nanocrystalline NiAl matrix was formed, with uniformly distributed Al₂O₃ inclusions as reinforcement. The PPS method successfully consolidated NiAl-Al₂O₃ composite powders with limited grain growth in the NiAl matrix. The appropriate sintering temperature for composite powder was selected based on analysis of the grain growth and hardness of Al₂O₃ subjected to PPS consolidation at various temperatures. As a result of these tests, sintering of the NiAl-Al₂O₃ powders was carried out at temperatures of 1200 °C, 1300 °C, and 1400 °C. The microstructure and properties of the initial powders, composite powders, and consolidated bulk composite materials were characterized by SEM, EDS, XRD, density, and hardness measurements. The hardness of the ultrafine-grained NiAl-Al₂O₃ composites obtained via PPS depends on the Al₂O₃ content in the composite, as well as the sintering temperature applied. The highest values of the hardness of the composites were obtained after sintering at the lowest temperature (1200 °C), reaching 7.2 ± 0.29 GPa and 8.4 ± 0.07 GPa for 10 wt.% Al₂O₃ and 20 wt.% Al₂O₃, respectively, and exceeding the hardness values reported in the literature. From a technological point of view, the possibility to use sintering temperatures as low as 1200 °C is crucial for the production of fully dense, ultrafine-grained composites with high hardness.